A Single-Trim Frequency Reference Achieving ppm± 120 Accuracy From -50 °C to 170 °C

A single-trim, highly accurate Colpitts-based frequency reference is presented. Our analysis shows that the Colpitts-topology outperforms cross-coupled LC -topology in terms of temperature stability. Measurements on prototypes a 0.13- $\mu \text{m}$ high-voltage CMOS silicon insulator (SOI) process were carried out from −50 °C to 170 °C. Based sample-specific single room trim and batch calibration, our achieves an accuracy ±120 ppm for 16 samples wafer utilized extracting batch-calibration polynomial ±300 48 across three wafers same batch. This 4 notation="LaTeX">$\times $ improvement over related single-trim state-of-the-art solutions. Frequency drift due aging, tested after six-day 175 storage, below 100 ppm. The oscillator core dissipates 3.5 mW 2.5-V supply has 220-ppm/V sensitivity without regulation.